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| NTF3055-100 Preferred Device Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Applications http://onsemi.com * * * * Power Supplies Converters Power Motor Controls Bridge Circuits 3.0 A, 60 V RDS(on) = 110 mW N-Channel D Features * Pb-Free Package is Available MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 MW) Gate-to-Source Voltage - Continuous - Non-repetitive (tp 10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tp 10 ms) Total Power Dissipation @ TA = 25C (Note 1) Total Power Dissipation @ TA = 25C (Note 2) Derate above 25C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, IL(pk) = 7.0 Apk, L = 3.0 mH, VDS = 60 Vdc) Thermal Resistance - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS Value 60 60 20 30 3.0 1.4 9.0 2.1 1.3 0.014 -55 to 175 74 Unit Vdc Vdc Vdc Vpk Adc Apk W W W/C C mJ 1 G S 4 2 3 SOT-223 CASE 318E STYLE 3 MARKING DIAGRAM 3055 LWW = Device Code = Location Code = Work Week ID ID IDM PD 3055 L WW PIN ASSIGNMENT 4 Drain TJ, Tstg EAS 1 2 3 Gate C/W RqJA RqJA TL 72.3 114 260 C Drain Source ORDERING INFORMATION Device NTF3055-100T1 NTF3055-100T3 NTF3055-100T3G Package SOT-223 SOT-223 SOT-223 (Pb-Free) Shipping 1000/Tape & Reel 4000/Tape & Reel 4000/Tape & Reel 4000/Tape & Reel 1. When surface mounted to an FR4 board using 1 pad size, 1 oz. (Cu. Area 1.127 in2). 2. When surface mounted to an FR4 board using minimum recommended pad size, 2-2.4 oz. (Cu. Area 0.272 in2). NTF3055-100T3LF SOT-223 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2004 1 February, 2004 - Rev. 2 Publication Order Number: NTF3055-100/D NTF3055-100 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 1.5 Adc) Static Drain-to-Source On-Resistance (Note 3) (VGS = 10 Vdc, ID = 3.0 Adc) (VGS = 10 Vdc, ID = 1.5 Adc, TJ = 150C) Forward Transconductance (Note 3) (VDS = 8.0 Vdc, ID = 1.7 Adc) VGS(th) 2.0 - RDS(on) - VDS(on) - gfs - 0.27 0.24 3.2 0.40 - - Mhos 88 110 Vdc 3.0 6.6 4.0 - Vdc mV/C mW (VGS = 20 Vdc, VDS = 0 Vdc) V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 68 66 - - Vdc mV/C mAdc Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 V, Vd V f = 1.0 MHz) Ciss Coss Crss - - - 324 35 110 455 50 155 pF SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 3.0 Adc, Vd 3 0 Ad VGS = 10 Vdc) (Note 3) (VDD = 30 Vdc, ID = 3.0 Adc, VGS = 10 Vdc, Vdc RG = 9.1 W) (Note 3) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 9.4 14 21 13 10.6 1.9 4.2 20 30 45 30 22 - - nC ns SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 3.0 Adc, VGS = 0 Vdc) (IS = 3.0 Adc, VGS = 0 Vdc, TJ = 150C) (Note 3) VSD - - trr (IS = 3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) Reverse Recovery Stored Charge 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. Switching characteristics are independent of operating junction temperatures. ta tb QRR - - - - 0.89 0.74 30 22 8.6 0.04 1.0 - - - - - mC ns Vdc Reverse Recovery Time http://onsemi.com 2 NTF3055-100 6 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 5 4 3 2 1 0 0 1 2 3 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 6 V VGS = 8 V VGS = 4.5 V VGS = 10 V 6 VDS 10 V VGS = 5 V 5 4 3 2 1 0 3 3.5 4 4.5 5 5.5 6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TJ = 25C TJ = 100C TJ = -55C VGS = 4 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) Figure 2. Transfer Characteristics 0.16 VGS = 10 V 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 TJ = -55C TJ = 25C TJ = 100C 0.16 VGS = 15 V 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 TJ = 25C TJ = -55C TJ = 100C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Figure 3. On-Resistance versus Gate-to-Source Voltage Figure 4. On-Resistance versus Drain Current and Gate Voltage 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 ID = 1.5 A VGS = 10 V IDSS, LEAKAGE (nA) 1000 VGS = 0 V TJ = 150C 100 TJ = 125C 10 TJ = 100C 1 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (C) 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current versus Voltage http://onsemi.com 3 NTF3055-100 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 800 700 C, CAPACITANCE (pF) 600 500 VDS = 0 V Ciss VGS = 0 V 12 10 8 6 4 2 0 0 Q1 QT VGS TJ = 25C Crss 400 300 200 100 0 10 5 VGS 0 VDS 5 Crss Coss Ciss Q2 ID = 3 A TJ = 25C 2 4 6 8 10 12 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 100 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 3 A VGS = 10 V t, TIME (ns) td(off) tr 10 td(on) tf 3 Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge VGS = 0 V TJ = 25C 2 1 1 1 10 RG, GATE RESISTANCE (W) 100 0 0.54 0.58 0.62 0.66 0.7 0.74 0.78 0.82 0.86 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance 100 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C 10 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 80 70 60 50 40 30 20 10 0 Figure 10. Diode Forward Voltage versus Current ID = 7 A 1 1 ms 10 ms 0.1 RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 100 ms dc 10 100 0.01 0.1 25 50 75 100 125 150 175 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy versus Starting Junction Temperature http://onsemi.com 4 NTF3055-100 10 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE RESISTANCE (NORMALIZED) 1 x 1 inch 1 oz. Cu Pad (3 x 3 inch FR4) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 13. Thermal Response http://onsemi.com 5 NTF3055-100 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0_ 10 _ S 0.264 0.287 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0_ 10 _ 6.70 7.30 4 S 1 2 3 B D L G J C 0.08 (0003) H M K SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 SOT-223 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NTF3055-100/D |
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